A GaAs-Based LNA with less than 1-dB measured NF for X-Band Communication Systems | ||
| Journal of Communication Engineering | ||
| مقاله 6، دوره 10، شماره 1 - شماره پیاپی 20، فروردین 2021، صفحه 74-82 اصل مقاله (1012.34 K) | ||
| نوع مقاله: Research Paper | ||
| شناسه دیجیتال (DOI): 10.22070/jce.2022.16083.1215 | ||
| نویسندگان | ||
| Sina Rezaee1؛ javad Ghalibafan* 2 | ||
| 1Sharif University of Technology Department of Electrical Engineering Tehran,Iran | ||
| 2shahrood university | ||
| چکیده | ||
| In communication systems, Low-Noise Amplifiers (LNAs) with low noise performance are essential components. This work introduces a LNA for radio frequency front-end receivers with a frequency range of 8–9.6 GHz. The planned LNA contains a two-stage high-electron-mobility transistor cascade amplifier with a minimum measured Noise Figure (NF) of 0.8 dB and a peak gain of 25 dB at room temperature. The proposed LNA is based on a GaAs FET transistor (CE3512K2) because of its good low noise performance at microwave frequency bands. The measured results demonstrate that the proposed LNA is perfectly matched over the whole operational frequency spectrum of the input/output ports (|S11| < -10 dB, |S22| <-10 dB). In addition, the suggested LNA draws a current of 20 mA and operates with a +3.6 V and a -3.6 V power supply. The recommended LNA is appropriate for X frequency bands applications. | ||
| کلیدواژهها | ||
| Low-Noise Amplifier؛ Microwave Applications؛ GaAs FET Transistor | ||
| مراجع | ||
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1- J. C. Bardin and S. Weinreb, "A 0.1–5 GHz Cryogenic SiGe MMIC LNA," IEEE Microwave and Wireless Components Letters, vol. 19, no. 6, pp. 407-409, June 2009.
2- E. Cha et al., "0.3–14 and 16–28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers," IEEE Trans. Microwave Theory and Techniques, vol. 66, no. 11, pp. 4860-4869, Nov. 2018.
3- B. D. Bradley, "An ultra low power, high performance Medical Implant Communication System (MICS) transceiver for implantable devices" Biomedical Circuits and Systems Conference, pp. 158-161, Dec. 2006.
4- C. Wang and C. Du, "A CMOS 3.1-10.6 GHz Merged UWB LNA and Mixer," 2008 4th International Conference on Wireless Communications, Networking and Mobile Computing, 2008, pp. 1-4.
5- B. Hu, X. Yu and L. He, "A Gm-boosted and current peaking wideband merged LNA and mixer," 2010 IEEE International Conference on Ultra-Wideband, 2010, pp. 1-4.
6- A. Amer, E. Hegazi and H. F. Ragaie, "A 90-nm Wideband Merged CMOS LNA and Mixer Exploiting Noise Cancellation," IEEE Journal of Solid-State Circuits, vol. 42, no. 2, pp. 323-328, Feb. 2007.
7- P. Chehrenegar, M. Abbasi, J. Grahn and K. Andersson, "Highly linear 1–3 GHz GaN HEMT low-noise amplifier," 2012 IEEE/MTT-S International Microwave Symposium Digest, 2012, pp. 1-3.
8- S. Masuda, T. Ohki and T. Hirose, "Very Compact High-gain Broadband Low-noise Amplifier in InP HEMT Technology," 2006 IEEE MTT-S International Microwave Symposium Digest, 2006, pp. 77-80.
9- I. Khalil, A. Liero, M. Rudolph, R. Lossy and W. Heinrich, "GaN HEMT Potential for Low-Noise Highly Linear RF Applications," IEEE Microwave and Wireless Components Letters, vol. 18, no. 9, pp. 605-607, Sept. 2008.
10- M. L. Edwards and J. H. Sinsky, "A new criterion for linear 2-port stability using a single geometrically derived parameter," IEEE Trans. Microwave Theory and Techniques, vol. 40, no. 12, pp. 2303-2311, Dec. 1992. | ||
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